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| DC COMPONENTS CO., LTD. R 2SB857 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (peak) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating -70 -50 -5 -4 -8 40 +150 -55 to +150 Unit V V V A A W o o .625(15.87) .570(14.48) 123 .350(8.90) .330(8.38) .640 Typ (16.25) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE1 hFE2 fT 380s, Duty Cycle 2% Min -70 -50 -5 35 60 - Typ 15 Max -1 -1 -1 320 - Unit V V V A V V MHz Test Conditions IC=-10A, IE=0 IC=-50mA, IB=0 IE=-10A, IC=0 VCB=-50V, IE=0 IC=-2A, IB=-0.2A IC=-1A, VCE=-4V IC=-0.1A, VCE=-4V IC=-1A, VCE=-4V IC=-500mA, VCE=-4V, f=100MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width Classification of hFE2 Rank Range B 60~120 C 100~200 D 160~320 |
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